A joint research group led by Professor Masaaki Tanaka (Graduate School of Engineering) and National Institute of Technology, Fukushima College have demonstrated for the first time in the world the topological Dirac semimetallic properties of single-element α-Sn. Using state-of-the-art crystal growth technology, the group grew high-quality single crystals of α-Sn on Group IIIV semiconductors and demonstrated that the single crystals are topological Dirac semimetal, which is important as parent phase that can be transformed into various topological phases. As a result, the material, which is highly compatible with other semiconductors and environmentally friendly, is expected to become a new platform for the development of topological properties and quantum information devices. These results were published in the online edition of Advanced Materials on October 14 (Wed.).