Professor Toshiro Hiramoto and Associate Professor Masaharu Kobayashi, in collaboration with Nara Institute of Science and Technology, have developed a nanosheet transistor in which the gate covers a nanosheet oxide semiconductor using atomic deposition method, achieving high mobility and high bias tolerance. The transistor is expected to enable higher integration and functionality of semiconductors and the development of social services that make use of big data. This achievement will be presented on June 15 at the “2023 Symposium on VLSI Technology and Circuits” in Kyoto, Japan.
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