A joint research group led by Professor Shinobu Ohya and Professor Masaaki Tanaka has successfully observed for the first time the colossal magnetoresistive switching effect controllable by a magnetic field in a two-terminal device with electrodes consisting of two layers of Fe and MgO and a 20 nm channel length of B-doped Ge.Although still at low temperatures, the resistance change can be as large as 25,000% just by applying a magnetic field, which is expected to lead to spin-based resistive random access memory and neuromorphic computing devices. The resulting paper has been published in the online edition of Advanced Materials.
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