Professor Toshiro Hiramoto and his colleagues at the Institute of Industrial Science have developed the first prototype of a double-sided gate IGBT, in which the MOS gate of the insulated gate bipolar transistor (IGBT), a type of power transistor, is installed not only on the surface of the silicon substrate but also on the reverse side. The result is a 62% reduction in switching losses compared with conventional IGBTs. Professor Hiramoto and his colleagues, in collaboration with industry-academic research groups including Mitsubishi Electric Corporation and the Tokyo Institute of Technology, have achieved this for the first time using double-sided lithography technology, and this achievement is noteworthy as it will contribute to a significant reduction in electricity demand. This achievement was presented at the IEEE International Electron Devices Meeting (IEDM), an online conference.
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