Professor Masaaki Tanaka and his colleagues at the Graduate School of Engineering have succeeded in magnetising a single layer of the ferromagnetic semiconductor GaMnAs at the world’s lowest current density by using the ‘spin-starting torque’ generated by passing an electric current through it. This was achieved by suppressing the torque component, which interferes with magnetisation switching due to the magnetic field generated by the current. The achievement is expected to lead to the exploration of new ferromagnetic materials and device structures. The paper was published in the electronic edition of Nature Electronics on Monday, 30 November.
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