Professor Masaaki Tanaka (Graduate School of Engineering) and Associate Professor Shinobu Oya (Graduate School of Engineering) have achieved high mobility 2D hole conduction on the surface of an oxide semiconductor. 0.25 nm or smaller iron films were deposited on SrTiO3 substrates in an ultra-high vacuum, followed by the formation of iron oxide in air. Although it is well known that electronic conduction occurs at the interface between SrTiO3 and other oxides, this is the first time that high hole conduction has been observed. It is also possible to control the hole and electron conduction depending on the film thickness, which is an advantage in terms of device fabrication.
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