A joint research group led by Professor Masahiro Nomura has developed a thermoelectric power generation device with heat flow control using a silicon thin film nanostructure, achieving the world’s highest performance, more than 10 times higher than conventional devices, as a thermoelectric power generation device that can be mass-produced. This will enable sensors and other devices to be driven and data to be transmitted even with smaller temperature differences, and is attracting attention as a full-scale energy-harvesting technology that will support the trillion-sensor society of the future. In addition to the Nomura Group, the National Institute for Materials Science (NIMS), the University of Freiburg, Germany, Seiko Future Creation Inc., TOPPAN Inc., and Maeda Corporation joined in the joint research. The resulting paper has been published in the online edition of Materials Today Physics.